inchange semiconductor isc product specification isc silicon npn power transistors TIP51 description dc current gain -h fe = 30~150@ i c = 0.3a collector-emitter sustaining voltage- : v ceo(sus) = 250v(min) applications designed for line operated audio out put amplifier ,and switching power supply drivers applications. absolute maximum ratings(t =25 a ) symbol parameter value unit v cbo collector-base voltage 350 v v ceo collector-emitter voltage 250 v v ebo emitter-base voltage 5 v i c collector current-continuous 3.0 a i cm collector current-peak 5.0 a i b b base current 0.6 a p d collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.25 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors TIP51 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c = 30ma; i b = 0 250 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 0.6a b 1.5 v v be (on) base-emitter on voltage i c = 3a; v ce = 10v 1.5 v i ces collector cutoff current v ce = 350v; v be = 0 1.0 ma i ceo collector cutoff current v ce = 150v; i b = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 0.3a; v ce = 10v 30 150 h fe-2 dc current gain i c = 3a; v ce = 10v 10 f t current-gain?bandwidth product i c = 0.2a; v ce = 10v 2.5 mhz isc website www.iscsemi.cn
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